Schottky diodes have been fabricated by deposition of Ti, Ni, Cu on epitaxial layers of p-type and n-type 6H-SiC. The fabricated devices have been characterised by CV, IV and photoelectric measurements. The results from the different characterisations are compared. The effect of incomplete ionisation of dopants and high series resistance on the results from CV-measurements is discussed.
In addition to the results obtained from the experiments presented in this paper data has also been collected from other research groups in order to investigate the mechanism of Schottky barrier formation on Silicon Carbide. The results show that for a number of metals the barrier height is strongly correlated to the difference between the electron affinity of the semiconductor and the metal work function, while other metals show significant deviation from the Schottky-Mott theory.