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Characterization of Si Wafer Bonding by Injection-Dependent Recombination Velocity
Japanese Journal of Applied Physics, Part 2: Letters. 1995; 34:L806-L809
Dummy photo Göran Thungström
EKS

Publication type:
Article in journal

Permanent link (URI):
http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-1924

ISSN:
0021-4922


Authors:
Grivickas V, Thungström G, Bikbajevas V, Linnros J, Noreika D

SCB areas:
Annan elektroteknik och elektronik